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Integrated electro-optic (EO) modulators are fundamental photonics components with utility in domains ranging from digital communications to quantum information processing. At telecommunication wavelengths, thin-film lithium niobate modulators exhibit state-of-the-art performance in voltage-length product (V_πL), optical loss, and EO bandwidth. However, applications in optical imaging, optogenetics, and quantum science generally require devices operating in the visible-to-near-infrared (VNIR) wavelength range. Here, we realize VNIR amplitude and phase modulators featuringV_πL’s of sub-1 V ⋅ cm, low optical loss, and high bandwidth EO response. Our Mach-Zehnder modulators exhibit aV_πLas low as 0.55 V ⋅ cm at 738 nm, on-chip optical loss of ~0.7 dB/cm, and EO bandwidths in excess of 35 GHz. Furthermore, we highlight the opportunities these high-performance modulators offer by demonstrating integrated EO frequency combs operating at VNIR wavelengths, with over 50 lines and tunable spacing, and frequency shifting of pulsed light beyond its intrinsic bandwidth (up to 7x Fourier limit) by an EO shearing method.

Mirrors are ubiquitous in optics and are used to control the propagation of optical signals in space. Here we propose and demonstrate frequency domain mirrors that provide reflections of the optical energy in a frequency synthetic dimension, using electro-optic modulation. First, we theoretically explore the concept of frequency mirrors with the investigation of propagation loss, and reflectivity in the frequency domain. Next, we explore the mirror formed through polarization mode-splitting in a thin-film lithium niobate micro-resonator. By exciting the Bloch waves of the synthetic frequency crystal with different wave vectors, we show various states formed by the interference between forward propagating and reflected waves. Finally, we expand on this idea, and generate tunable frequency mirrors as well as demonstrate trapped states formed by these mirrors using coupled lithium niobate micro-resonators. The ability to control the flow of light in the frequency domain could enable a wide range of applications, including the study of random walks, boson sampling, frequency comb sources, optical computation, and topological photonics. Furthermore, demonstration of optical elements such as cavities, lasers, and photonic crystals in the frequency domain, may be possible.

Manipulating the frequency and bandwidth of nonclassical light is essential for implementing frequency-encoded/multiplexed quantum computation, communication, and networking protocols, and for bridging spectral mismatch among various quantum systems. However, quantum spectral control requires a strong nonlinearity mediated by light, microwave, or acoustics, which is challenging to realize with high efficiency, low noise, and on an integrated chip. Here, we demonstrate both frequency shifting and bandwidth compression of heralded single-photon pulses using an integrated thin-film lithium niobate (TFLN) phase modulator. We achieve record-high electro-optic frequency shearing of telecom single photons over terahertz range (±641 GHz or ±5.2 nm), enabling high visibility quantum interference between frequency-nondegenerate photon pairs. We further operate the modulator as a time lens and demonstrate over eighteen-fold (6.55 nm to 0.35 nm) bandwidth compression of single photons. Our results showcase the viability and promise of on-chip quantum spectral control for scalable photonic quantum information processing.

Existing nonlinear-optic implementations of pure, unfiltered heralded single-photon sources do not offer the scalability required for densely integrated quantum networks. Additionally, lithium niobate has hitherto been unsuitable for such use due to its material dispersion. We engineer the dispersion and the quasi-phasematching conditions of a waveguide in the rapidly emerging thin-film lithium niobate platform to generate spectrally separable photon pairs in the telecommunications band. Such photon pairs can be used as spectrally pure heralded single-photon sources in quantum networks. We estimate a heralded-state spectral purity of >94% based on joint spectral intensity measurements. Further, a joint spectral phase-sensitive measurement of the unheralded time-integrated second-order correlation function yields a heralded-state purity of$(86\pm <\#comment/>5)\mathrm{\%<\#comment/>}$.

Electro-optic modulators (EOMs) convert signals from the electrical to the optical domain. They are at the heart of optical communication, microwave signal processing, sensing, and quantum technologies. Next-generation EOMs require high-density integration, low cost, and high performance simultaneously, which are difficult to achieve with established integrated photonics platforms. Thin-film lithium niobate (LN) has recently emerged as a strong contender owing to its high intrinsic electro-optic (EO) efficiency, industry-proven performance, robustness, and, importantly, the rapid development of scalable fabrication techniques. The thin-film LN platform inherits nearly all the material advantages from the legacy bulk LN devices and amplifies them with a smaller footprint, wider bandwidths, and lower power consumption. Since the first adoption of commercial thin-film LN wafers only a few years ago, the overall performance of thin-film LN modulators is already comparable with, if not exceeding, the performance of the best alternatives based on mature platforms such as silicon and indium phosphide, which have benefited from many decades of research and development. In this mini-review, we explain the principles and technical advances that have enabled state-of-the-art LN modulator demonstrations. We discuss several approaches, their advantages and challenges. We also outline the paths to follow if LN modulators are to improve further, and we provide a perspective on what we believe their performance could become in the future. Finally, as the integrated LN modulator is a key subcomponent of more complex photonic functionalities, we look forward to exciting opportunities for larger-scale LN EO circuits beyond single components.

Linking superconducting quantum devices to optical fibers via microwave-optical quantum transducers may enable large-scale quantum networks. For this application, transducers based on the Pockels electro-optic (EO) effect are promising for their direct conversion mechanism, high bandwidth, and potential for low-noise operation. However, previously demonstrated EO transducers require large optical pump power to overcome weak EO coupling and reach high efficiency. Here, we create an EO transducer in thin-film lithium niobate, a platform that provides low optical loss and strong EO coupling. We demonstrate on-chip transduction efficiencies of up toandof optical pump power. The transduction efficiency can be improved by further reducing the microwave resonator’s piezoelectric coupling to acoustic modes, increasing the optical resonator quality factor to previously demonstrated levels, and changing the electrode geometry for enhanced EO coupling. We expect that with further development, EO transducers in thin-film lithium niobate can achieve near-unity efficiency with low optical pump power.